Excellence in Compound Semiconductors

The ‘O’ in OSEMI is for Gate-Oxide. We have had GaN and GaAs based MOSFET materials and devices in development for many years with U.S. DoD support. We are pleased to be releasing these patented and patent-pending devices for qualified customers. The Compound Semiconductor MOSFET promises lower cost, high performance MMICs, and higher integration levels than have been possible using more standard HBT and HFET approaches. The high breakdown voltage and excellent performance of the GaN MOSFETs make them particularly suitable for a variety of cutting-edge applications. OSEMI has installed a new prototyping capability that includes a Leica^TM eBeam Lithography System and a GCA Stepper for the rapid production of prototype transistors and MMICs. We are also able to apply these same epitaxial oxide materials to the passivation of IR detectors and to laser facet coating using the Veeco^TM EMOF MBE System. We would be pleased to work with you on your device or MMIC requirements. Please contact OSEMI to discuss your current and future Compound Semiconductor MOSFET requirements.

Advantages of Gate Oxides and Compound Semiconductor MOSFETs:

• Passivation of surface states
• Low microwave dispersion
• Low noise figures (NF)
• No gate recess and simpler processing
• Planar process technology
• Improved breakdown voltage
• Smaller die size when compared with standard HFETs
• Very high IC yields
• Good device lifetime
• Reasonable cost

 Please contact us at OSEMI to discuss how we can assist you with your device and system level requirements using our PATENT-PENDING GO-GaN^TM technology.

To obtain a data sheet, click here

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